Motlan and Goldys, E.M. and Tansley, T.L. (2002) THE EFFECT OF TARGET NITRIDATION ON STRUCTURAL PROPERTIES OF InN GROWN BY RADIO-FREQUENCY REACTIVE SPUTTERING. Jurnal Thin Solid Films, 422 (01). pp. 28-32. ISSN 0040-6090
Full text not available from this repository.Abstract
The structure and composition of indium nitride (InN) films grown by radio frequency reactive sputtering as a function of target nitridation have been investigated. X-ray diffraction shows that the films are primarily polycrystalline with preferred (0 0 2) orientation indicating the c-axis of the hexagonal InN structure perpendicular to the substrate. Scanning electron microscopy shows that films grown from non-nitrided targets are characterised by smaller grain size and rougher surfaces, with no observable structure. Films grown with pre-nitrided targets have a continuous columnar morphology with relatively even surfaces. X-ray photoelectron spectroscopy and Rutherford backscattering techniques were used to quantify the amounts of In, N and O contents.
Item Type: | Article |
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Keywords: | Sputtering; Indium nitride; Morphology; Composition |
Subjects: | Q Science > QC Physics Q Science > QC Physics > QC120 Descriptive and Experimental mechanics Q Science > QC Physics > QC170 Atomic physics. Constitution and properties of matter including molecular physics, relativity, quantum theory, and solid state physics |
Divisions: | Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika |
Depositing User: | Mrs Harly Christy Siagian |
Date Deposited: | 21 Aug 2019 09:39 |
Last Modified: | 21 Aug 2019 09:39 |
URI: | https://digilib.unimed.ac.id/id/eprint/35826 |