THE EFFECT OF TARGET NITRIDATION ON STRUCTURAL PROPERTIES OF InN GROWN BY RADIO-FREQUENCY REACTIVE SPUTTERING

Motlan, and Goldys, E.M. and Tansley, T.L. (2002) THE EFFECT OF TARGET NITRIDATION ON STRUCTURAL PROPERTIES OF InN GROWN BY RADIO-FREQUENCY REACTIVE SPUTTERING. Jurnal Thin Solid Films, 422 (01). pp. 28-32. ISSN 0040-6090

Full text not available from this repository.
Official URL: https://doi.org/10.1016/S0040-6090(02)00772-1

Abstract

The structure and composition of indium nitride (InN) films grown by radio frequency reactive sputtering as a function of target nitridation have been investigated. X-ray diffraction shows that the films are primarily polycrystalline with preferred (0 0 2) orientation indicating the c-axis of the hexagonal InN structure perpendicular to the substrate. Scanning electron microscopy shows that films grown from non-nitrided targets are characterised by smaller grain size and rougher surfaces, with no observable structure. Films grown with pre-nitrided targets have a continuous columnar morphology with relatively even surfaces. X-ray photoelectron spectroscopy and Rutherford backscattering techniques were used to quantify the amounts of In, N and O contents.

Item Type: Article
Keywords: Sputtering; Indium nitride; Morphology; Composition
Subjects: Q Science > QC Physics
Q Science > QC Physics > QC120 Descriptive and Experimental mechanics
Q Science > QC Physics > QC170 Atomic physics. Constitution and properties of matter including molecular physics, relativity, quantum theory, and solid state physics
Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika
Depositing User: Mrs Harly Christy Siagian
Date Deposited: 21 Aug 2019 09:39
URI: http://digilib.unimed.ac.id/id/eprint/35826

Actions (login required)

View Item View Item