Kumar, Sunil and Mo, Li and Motlan, and Tansley, T.L. (1996) ELEMENTAL COMPOSITION OF REACTIVELY SPUTTERED INDIUM NITRIDE THIN FILMS. Japanese Journal of Applied Physics, 35 (4A). ISSN 1347-4065

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Official URL: https://doi.org/10.1143/JJAP.35.2261


Indium nitride (InN) thin films have been grown on a variety of substrates using low-temperature radio frequency reactive sputtering of indium metal in pure nitrogen plasma. Quantitative compositional analyses of the films, carried out using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS), suggest that large amounts of oxygen are present in them. The high concentration of oxygen in our films is attributed to the voided microstructure as revealed by cross-sectional scanning electron microscopy. The XPS studies also suggest that the oxygen incorporated into the films is bonded to nitrogen.

Item Type: Article
Keywords: Indium nitride; Thin films; Photoelectron spectroscopy
Subjects: Q Science > QC Physics
Q Science > QC Physics > QC120 Descriptive and Experimental mechanics
Q Science > QC Physics > QC170 Atomic physics. Constitution and properties of matter including molecular physics, relativity, quantum theory, and solid state physics
Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika
Depositing User: Mrs Harly Christy Siagian
Date Deposited: 21 Aug 2019 09:52
URI: http://digilib.unimed.ac.id/id/eprint/35828

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