PHOTOLUMINESCENCE OF GaSb SELF-ASSEMBLED QUANTUM DOT LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Motlan, and Goldys, E.M. and Dao, L.V. (2002) PHOTOLUMINESCENCE OF GaSb SELF-ASSEMBLED QUANTUM DOT LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION. Journal of Vacuum Science & Technology B, 20 (01). ISSN 1071-1023

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Official URL: https://doi.org/10.1116/1.1445167

Abstract

We report results of photoluminescence (PL) of GaSb self-assembled quantum dots grown by metalorganic chemical vapor deposition on GaAs substrates. We examined the emission from dots with average height of (5±0.3) nm, width of (38±2) nm, and density of 1.3×1010 cm−2. We found the PL emission from quantum dots at 1.08 eV and from the wetting layer at 1.40 eV. The quantum dot peak energy is almost constant in the temperature range of 10–80 K suggesting that the interdot tunneling effects are insignificant. The emission from quantum dots is thermally more stable than the wetting layer emission. The results are in agreement with those commonly reported for molecular beam epitaxy grown samples.

Item Type: Article
Keywords: Photoluminescence; Quantum dot; Metalorganic chemical vapor deposition
Subjects: Q Science > QC Physics
Q Science > QC Physics > QC120 Descriptive and Experimental mechanics
Q Science > QC Physics > QC170 Atomic physics. Constitution and properties of matter including molecular physics, relativity, quantum theory, and solid state physics
Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika
Depositing User: Mrs Harly Christy Siagian
Date Deposited: 21 Aug 2019 09:35
URI: http://digilib.unimed.ac.id/id/eprint/35825

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