MULTILAYER GaSb/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Motlan, and Butcher, K.S.A. and Goldys, E.M. and Tansley, T.L. (2003) MULTILAYER GaSb/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION. Jurnal Materials Chemistry and Physics, 81 (01). pp. 8-10. ISSN 0254-0584

Full text not available from this repository.
Official URL: https://doi.org/10.1016/S0254-0584(03)00163-9

Abstract

A mutilayer structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown for the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski–Krastanow (S–K) growth mode. Evidence of the growth of the self-assembled quantum dots was provided using transmission electron microscopy. This study shows that the GaSb/GaAs heterostructure is well controlled and there is no sign of the intermixing that often occurs for this system. The existence of the quantum dots and of a wetting layer was also supported by photoluminescence spectra. These results open the way to the realization of GaSb/GaAs QD superlattice structures in which the islands have equal size in all layers. The QD structures also provide an opportunity for studying electronic coupling between islands.

Item Type: Article
Keywords: Multilayer;Deposition; Quantum dots
Subjects: Q Science > QC Physics
Q Science > QC Physics > QC120 Descriptive and Experimental mechanics
Q Science > QC Physics > QC170 Atomic physics. Constitution and properties of matter including molecular physics, relativity, quantum theory, and solid state physics
Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika
Depositing User: Mrs Harly Christy Siagian
Date Deposited: 21 Aug 2019 09:23
URI: http://digilib.unimed.ac.id/id/eprint/35824

Actions (login required)

View Item View Item