CATHODOLUMINESCENCE OF GaSb/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN BY MOCVD

Motlan, and Goldys, E.M. and Butcher, K.S.A. and Tansley, T.L. (2004) CATHODOLUMINESCENCE OF GaSb/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN BY MOCVD. Jurnal Materials Letters, 58 (01). pp. 80-83. ISSN 0167-577X

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Official URL: https://doi.org/10.1016/S0167-577X(03)00419-1

Abstract

Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures.

Item Type: Article
Keywords: Quantum dots; Self-assembled growth; Metalorganic chemical vapour epitaxy; Cathodoluminescence
Subjects: Q Science > QC Physics
Q Science > QC Physics > QC120 Descriptive and Experimental mechanics
Q Science > QC Physics > QC170 Atomic physics. Constitution and properties of matter including molecular physics, relativity, quantum theory, and solid state physics
Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika
Depositing User: Mrs Harly Christy Siagian
Date Deposited: 21 Aug 2019 09:19
URI: http://digilib.unimed.ac.id/id/eprint/35823

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